In situ high-resolution thermal microscopy on integrated circuits

doi:10.1364/OE.25.021548

Chia Nan University of Pharmacy & Science Institutional Repository > 環境永續暨休閒學院 > 運動管理系 > 期刊論文 > Item 310902800/31750

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標題:	In situ high-resolution thermal microscopy on integrated circuits
作者:	Zhuo, Guan-Yu Su, Hai-Ching Wang, Hsien-Yi Chan, Ming-Che
貢獻者:	Natl Sun Yat Sen Univ, Inst Med Sci & Technol Natl Chiao Tung Univ, Inst Lighting & Energy Photon, Coll Photon Chia Nan Univ Pharm & Sci, Dept Sports Management Chi Mei Med Ctr, Dept Nephrol Natl Chiao Tung Univ, Inst Photon Syst, Coll Photon
關鍵字:	Rhodamine Dyes 2-Photon Microscopy Fluorescence Laser
日期:	2017-09-04
上傳時間:	2018-11-30 15:55:18 (UTC+8)
出版者:	Optical Soc Amer
摘要:	The miniaturization of metal tracks in integrated circuits (ICs) can cause abnormal heat dissipation, resulting in electrostatic discharge, overvoltage breakdown, and other unwanted issues. Unfortunately, locating areas of abnormal heat dissipation is limited either by the spatial resolution or imaging acquisition speed of current thermal analytical techniques. A rapid, non-contact approach to the thermal imaging of ICs with sub-mu m resolution could help to alleviate this issue. In this work, based on the intensity of the temperature-dependent two-photon fluorescence (TPF) of Rhodamine 6G (R6G) material, we developed a novel fast and non-invasive thermal microscopy with a sub-mu m resolution. Its application to the location of hotspots that may evolve into thermally induced defects in ICs was also demonstrated. To the best of our knowledge, this is the first study to present highresolution 2D thermal microscopic images of ICs, showing the generation, propagation, and distribution of heat during its operation. According to the demonstrated results, this scheme has considerable potential for future in situ hotspot analysis during the optimization stage of IC development. (C) 2017 Optical Society \of America
關聯:	Optics Express, v.25, n.18, pp.21548-21558
显示于类别:	[運動管理系] 期刊論文

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