Improvement quantum capacitance in supercapacitors using vacancy-defected BC3 monolayer

doi:10.1016/j.inoche.2023.111810

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Please use this identifier to cite or link to this item: https://ir.cnu.edu.tw/handle/310902800/34848

Title:	Improvement quantum capacitance in supercapacitors using vacancy-defected BC3 monolayer
Authors:	Saadh, Mohamed J. Hsu, Chou-Yi Sayyed, M. I. Kumar, Anjan Taki, Anmar Ghanim Singh, Parminder Adhab, Ayat Hussein Elmasry, Yasser Abdullaha, Sallal A. H.
Contributors:	Middle East Univ, Fac Pharm Chia Nan Univ Pharm & Sci, Dept Pharm Isra Univ, Dept Phys, Fac Sci Univ Tabuk, Renewable Energy & Environm Technol Ctr GLA Univ, Dept Elect & Commun Al Noor Univ Coll, Dept Radiol & Sonar Tech Thapar Inst Engn & Technol, Chem Engn Dept Al Zahrawi Univ Coll, Dept Pharm King Khalid Univ, Fac Sci, Dept Math Dijlah Univ Coll, Res Ctr
Keywords:	Supercapacitors BC 3 monolayer Quantum capacitance Vacancy defected
Date:	2024
Issue Date:	2024-12-25 11:04:27 (UTC+8)
Publisher:	ELSEVIER
Abstract:	In present research, we aimed to assess effectiveness of employing defected BC3 monolayer in supercapacitors as an electrode through DFT computations. Our focus was on single and double-vacancy BC3 monolayer. We studied stored charge diagrams, integrated quantum capacitance (CQ), and density of state (DOS) for both pristine and vacancy-modified defected BC3 monolayer structures. According to findings, applying vacancy-modified defected structures between -0.80 and 0.80 V leads to greater CQ value in comparison to pristine BC3 monolayer. Single and double vacancies may be employed as positive and negative electrodes, and are considered as a semiconductor. Computations reveal that stored charge in vacancy-modified defected structures is more than pristine BC3 monolayer between 0 and 0.8 V. Moreover, DV-modified defected structure stores more charge than both SV structures and BC3 monolayer. Our findings suggest that DV BC3 monolayer shows potential as a material for high-performance supercapacitors.
Relation:	Inorganic Chemistry Communications, v.159, Article 111810
Appears in Collections:	[Offices] 456

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